? semiconductor components industries, llc, 2000 october, 2000 rev. 1 1 publication order number: mbrb4030/d mbrb4030 preferred device switchmode ? power rectifier using the schottky barrier principle with a proprietary barrier metal. these stateoftheart devices have the following features: ? guardring for stress protection ? maximum die size ? 150 c operating junction temperature ? short heat sink tab manufactured not sheared mechanical characteristics ? case: epoxy, molded ? weight: 1.7 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads readily solderable ? shipped 50 units per plastic tube ? available in 24 mm tape and reel, 800 units per 13 reel by adding a at4o suffix to the part number ? marking: b4030 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v average rectified forward current (at rated v r ) t c = +115 c (note 1.) i f(av) 40 a peak repetitive forward current (at rated v r , square wave, 20 khz) t c = +112 c i frm 80 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 300 a peak repetitive reverse surge current (2.0 s, 1.0 khz) i rrm 2.0 a storage temperature range t stg 65 to +150 c operating junction temperature range t j 65 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s reverse energy (unclamped inductive surge) (t c = 25 c, l = 3.0 mh) w 600 mj 1. rating applies when pins 1 and 3 are connected. device package shipping ordering information mbrb4030 d 2 pak http://onsemi.com d 2 pak case 418b style 3 50/rail 3 4 1 schottky barrier rectifier 40 amperes 30 volts preferred devices are recommended choices for future use and best overall value. 3 1 4 mbrb4030t4 d 2 pak 800/tape & reel marking diagram b4030 b4030 = device code
mbrb4030 http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance junction to case r q jc 1.0 c/w thermal resistance junction to ambient (note 3.) r q ja 50 c/w electrical characteristics maximum instantaneous forward voltage (notes 2. and 4.), per device (i f = 20 a, t c = + 25 c) (i f = 20 a, t c = +150 c) (i f = 40 a, t c = + 25 c) (i f = 40 a, t c = +150 c) v f 0.46 0.34 0.55 0.45 v maximum instantaneous reverse current (note 4.), per device (rated dc voltage, t c = + 25 c) (rated dc voltage, t c = +125 c) i r 0.35 150 ma 2. rating applies when pins 1 and 3 are connected. 3. rating applies when surface mounted on the miniumum pad size recommended. 4. pulse test: pulse width = 300 m s, duty cycle 2.0%
mbrb4030 http://onsemi.com 3 electrical characteristics v r , reverse voltage (v) v r , reverse voltage (v) i r , reverse current (a) i f , instantaneous forward current (ma) (pin 1 shorted to pin 3) figure 1. maximum forward voltage v f , instantaneous voltage (v) 100 10 1.0 0.1 0.8 0.6 0.4 0.2 0 figure 2. typical forward voltage v f , instantaneous voltage (v) 100 10 1.0 0.1 0.7 0.6 0.4 0.1 0 figure 3. maximum reverse current v r , reverse voltage (v) 1.0 0.1 0.01 10 -3 10 -4 10 -5 30 25 15 10 0 figure 4. typical reverse current 1.0 0.1 0.01 10 -3 10 -4 10 -5 30 25 10 0 i r , reverse current (a) 0.7 0.5 0.3 0.1 0.5 0.3 0.2 20 5 20 15 5 figure 5. maximum and typical capacitance 10 4 1000 10 c, capacitance (pf) 1 typical 25 c t j = 150 c 100 c t j = 25 c 25 c t j = 150 c 100 c 25 c t j = 150 c 100 c 25 c t j = 150 c 100 c i f , instantaneous forward current (ma) (pin 1 shorted to pin 3) maximum
mbrb4030 http://onsemi.com 4 electrical characteristics i f(av) , average forward current (a) 50 40 30 20 10 0 70 50 30 p f(av) , average forward power dissipation (watts) 60 40 80 dc 10 (pin 1 shorted to pin 3) t a , ambient temperature ( c) i f(av) , average forward current (a) (pin 1 shorted to pin 3) t a , ambient temperature ( c) 20 15 10 5 0 50 i f(av) , average forward current (a) 100 dc 10 20 square wave (pin 1 shorted to pin 3) 150 12 10 8 6 2 0 150 100 050 t, time (ms) 1.0 0.1 0.01 100 0.1 r(t), effective transient thermal 10 1.0 1000 single pulse resistance (normalized) surface mounted on minimum recommended pad size r q ja = 25 c/w 4 square wave 20 010 i pk i av = 5.0 (capacitive load) i pk i av = 5.0 (capacitive load) p (resistive load) i pk i av = 5.0 (capacitive load) 20 t j = 150 c 10 20 dc p (resistive load) r q ja = 50 c/w p (resistive load) square wave t c , case temperature ( c) 70 50 40 30 20 10 0 140 120 100 i f(av) , average forward current (a) 130 110 150 10 20 square wave (pin 1 shorted to pin 3) 60 dc i pk i av = 5.0 p (resistive load) (capacitive load) p pk p pk t p t 1 time duty cycle, d = t p /t 1 peak power, p pk , is peak of an equivalent square power pulse. d t jl = p pk ? r q jl [d + (1 - d) ? r(t 1 + t p ) + r(t p ) - r(t 1 )] where d t jl = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, for example, r(t) = r(t 1 + t p ) = normalized value of transient thermal resistance at time, t 1 + t p . figure 6. current derating, infinite heatsink figure 7. current derating figure 8. current derating, free air figure 9. forward power dissipation figure 10. thermal response
mbrb4030 http://onsemi.com 5 information for using the d 2 pak surface mount package minimum recommended footprints for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. mm inches 0.33 8.38 0.08 2.032 0.04 1.016 0.63 17.02 0.42 10.66 0.12 3.05 0.24 6.096 d 2 pak power dissipation the power dissipation of the d 2 pak is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient; and the operating temperature, t a . using the values provided on the data sheet for the d 2 pak package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 2.5 watts. p d = 150 c 25 c = 2.5 watts 50 c/w the 50 c/w for the d 2 pak package assumes the recommended drain pad area of 158k mil 2 on fr4 glass epoxy printed circuit board to achieve a power dissipation of 2.5 watts using the footprint shown. another alternative is to use a ceramic substrate or an aluminum core board such as thermal clad ? . by using an aluminum core board material such as thermal clad, the power dissipation can be doubled using the same footprint. general soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 5 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. * due to shadowing and the inability to set the wave height to incorporate other surface mount components, the d 2 pak is not recommended for wave soldering.
mbrb4030 http://onsemi.com 6 recommended profile for reflow soldering for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones, and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 11 shows a typical heating profile for use when soldering the d 2 pak to a printed circuit board. this profile will vary among soldering systems but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies desired curve for high mass assemblies 100 c 150 c 160 c 170 c 140 c figure 11. typical solder heating profile
mbrb4030 http://onsemi.com 7 package dimensions style 1: pin 1. base 2. collector 3. emitter 4. collector style 2: pin 1. gate 2. drain 3. source 4. drain style 3: pin 1. anode 2. cathode 3. anode 4. cathode d2pak plastic package case 418b03 issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
mbrb4030 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mbrb4030/d switchmode is a trademark of semiconductor components industries, llc. thermal clad is a trademark of the bergquist company. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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